28a 500v n-channelmosfet kia semiconductors 28N50H kia semiconductors kia semiconductors 1 . description thispowermosfetisproducedusingkiaadvancedplanarstripedmostechnology.thisadvanced technologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitching performance,andwithstandhighenergypulseintheavalancheandcommutationmode.thesedevices arewellsuitedforhighefficiencyswitchedmodepowersupplies,activepowerfactorcorrectionbasedon halfbridgetopology. . 2 . features n r ds(on) = 0. 17 ? @ v gs =10v n low gate charge ( typical 102nc) n fast switching capability n avalanche energy specified n improved dv/dt capability 3. pinconfiguration 1of5 rev1.0jan2014 pin function 1 gate 2 drain 3 source
28a 500v n-channelmosfet kia semiconductors 28N50H kia semiconductors kia semiconductors 4. absolutemaximumratings (t c =25 o c,unlessotherwisespecified) parameter symbol ratings units drain-sourcevoltage v dss 500 v gate-sourcevoltage v gss + 30 v draincurrentcontinuous t c =25 o c i d 28 a t c =100 o c 16.8 a draincurrentpulsed(note1) i dp 112 a avalancheenergy repetitive(note1) e ar 43 mj singlepulse(note2) e as 1960 mj peakdioderecoverydv/dt(note3) dv/dt 4.5 v/ns totalpowerdissipation t c =25 o c p d 479 w derateabove25 o c 3.83 w/ o c junctiontemperature t j +150 o c storagetemperature t stg -55~+150 o c *draincurrentlimitedbymaximumjunctiontemperature. 5. thermalcharacteristics parameter symbol ratings units thermalresistance,junction-ambient r thja 62.5 o c/w thermalresistance,case-to-sinktyp. r thcs 0.5 thermalresistance,junction-case r thjc 0.26 2of5 rev1.0jan2014
28a 500v n-channelmosfet kia semiconductors 28N50H kia semiconductors kia semiconductors 6 . electricalcharacteristics (t j =25 c,unlessotherwisespecified) parameter symbol conditions min typ max units offcharacteristics drain-sourcebreakdownvoltage bv dss v gs =0v,i d =250 a 500 - - v zerogatevoltagedraincurrent i dss v ds =500v,v gs =0v - - 1 a v ds =400v,t c =125 o c - - 10 a gate-bodyleakagecurrent forward i gss v gs =30v,v ds =0v - - 100 na reverse v gs =-30v,v ds =0v - - -100 na breakdownvoltagetemperaturecoefficient bv dss / t j i d =250 a - 0.6 - v/ c oncharacteristics gatethresholdvoltage v gs(th) v ds =v gs ,i d =250 a 2.0 - 4.0 v staticdrain-sourceon-resistance r ds(on) v ds =10v,i d =14a - 0.16 0.2 forwardtransconductance g fs v ds =40v,i d =14a (note4) - 26 - s dynamiccharacteristics inputcapacitance c iss v ds =25v,v gs =0v, f=1mhz - 4085 - pf outputcapacitance c oss - 474 - pf reversetransfercapacitance c rss - 60 - pf switchingcharacteristics turn-ondelaytime t d(on) v dd =250v,i d =28a, r g =25 (note4,5) - 45 - ns risetime t r - 87 - ns turn-offdelaytime t d(off) - 355 - ns falltime t f - 130 - ns totalgatecharge q g v ds =400v,i d =28a, v gs =10v(note4,5) - 102 - nc gate-sourcecharge q gs - 43 - nc gate-draincharge q gd - 20 - nc drain-sourcediodecharacteristics drain-sourcediodeforwardvoltage v sd v gs =0v,i d =28a - - 1.4 v continuousdrain-sourcecurrent i sd - - 28 a pulseddrain-sourcecurrent i sm - - 112 a reverserecoverytime t rr i sd =28a dl sd /dt=100a/ s (note4) - 656 - ns reverserecoverycharge q rr - 11.5 - c note:1repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.l=5mh,i as =28a,v dd =50v,r g =25 ,staringt j =25 o c 3.i sd < 28a,di/dt< 100a/ s,v dd < bv dss ,staringt j =25 o c 4.pulsetest:pulsewidth< 300 s,dutycycle< 2% 5.essentiallyindependentofoperatingtemperature 3of5 rev1.0jan2014
28a 500v n-channelmosfet kia semiconductors 28N50H kia semiconductors kia semiconductors 7 . testcircuitsandwaveforms 4of5 rev1.0jan2014
28a 500v n-channelmosfet kia semiconductors 28N50H kia semiconductors kia semiconductors 5of5 rev1.0jan2014
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